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Model:nif5002n-d 🔎 nif5002nd
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Descr: . Electronic Components Datasheets Active components Transistors ON Semiconductor nif5002n-d.pdf
Group:Electronics > Components > Transistors
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NIF5002N Preferred Device Self-Protected FET with Temperature and Current Limit 42 V, 2.0 A, Single N-Channel, SOT-223 http://onsemi.com HDPlust devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process V(BR)DSS (Clamped) RDS(ON) TYP ID MAX to achieve the lowest possible on-resistance per silicon area while incorporating smart features. Integrated thermal and current limits 42 V 165 mW @ 10 V 2.0 A* work together to provide short circuit protection. The devices feature *Max current limit value is dependent on input an integrated Drain-to-Gate Clamp that enables them to withstand condition. high energy in the avalanche mode. The Clamp also provides Drain additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate-to-Source Clamp. Overvoltage MPWR Gate Protection Input RG Features

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